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• GaN Bootstrapping Amplifier IC Operating at up to 800 °C Temperature

  Yixin Xionget al

  IEEE Electron Device Letters (2025)

• p-GaN Gated HEMT with 770 I_ON/I_OFF Ratio Operating at 800 °C

  Ajay Kumar Visvkarmaet al

  IEEE Electron Device Letters (2025)

• Selective reduction in epitaxial SrFe_0.5Co_0.5O_2.5 and its reversibility

  Joonhyuk Leeet al

  Nature Communications (2025): 16, 7391

• Field-Programmable Bimodal Switching in a Hybrid-Dual-Gated MoS₂ Transistor

  Jaeeun Kwonet al

  ACS Omega (2025): 10, 4, 3878–3889

• Development of a Fully-Printed Flexible Polystyrene-Based Temperature Sensor with Anti-Humid Property

  Ahmad Al Shboulet al

  2023 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS). IEEE (2023) p. 1-4

• Flexible screen-printed SiC-based humidity sensors

  Arjun Wadhwaet al

  Communications Engineering 4.1 (2025): 1-13

• Fully Printed Flexible Polystyrene/Graphite-Based Temperature Sensor with Excellent Properties for Potential Smart Applications

  Ahmad Al Shboulet al

  ACS omega (2025)

• Correlation between experimental and modeled capacitance-voltage characteristics of Ga₂O₃ Schottky barrier diode in temperature range of 300–673 K

  Thanh Huong Voet al

  Physica B: Condensed Matter (2025): 416950

• Facile formation of nanoporous reduced graphene oxide via epoxy-based negative photoresist laser irradiation for highly sensitive and selective gas detection

  Min Seok Yanget al

  Sensors and Actuators B: Chemical 426 (2025): 137073

• Phase Engineering of SnSe_X (X = 1,2) Microstructures for High-Performance NO₂ Chemiresistive Room-Temperature Sensor Systems: Toward Highly Reliable and Robust Detection Properties under Humidity and Interfering Gas Conditions

  Yeongsik Hwaet al

  ACS sensors (2025)